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These measurements are as is, they helped to evaluate the original circuitry for the MUGEN design and they may be helpfull or interesting to you.
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1. Use of ECC83/5751 driver tubes in Long-Tail
remark: experimental test set-up, no use of overall feedback.
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output voltage
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output power
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distortion in % using no feedback
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in Veff
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into 5 ohm
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E83CC
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12AX7A
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ECC83
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5751
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5751
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5751
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JJ
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Svetlana
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Philips
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GE 5 star3 mica 50"s
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GE
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Siemens
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2.3
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1 W
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0.072
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0.07
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0.078
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0.08
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0.08
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0.075
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5
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5 W
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0.12
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0.08
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0.12
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0.11
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0.09
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0.08
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10
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20 W
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0.17
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0.11
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0.21
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0.072
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0.13
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0.12
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15
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45 W
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0.26
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0.18
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0.32
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0.05
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0.22
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0.16
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20
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80 W
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0.38
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0.3
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0.48
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0.13
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0.3
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0.22
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22.3
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100W
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0.5
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0.46
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0.55
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0.28
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0.4
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0.32
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sensitivity using the 5751 for full output: approx. 26 dB [no FB]
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2. Baxandall diode vs. distortion [quasi-complementary output stage]
remark: experimental prototype test set-up, no use of overall feedback.
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output voltage
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output power
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distortion in % ; Y = sine wave at 100kHz@5W correct ; N = sine wave at 100kHz@5W not completely correct
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in Veff
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into 5 ohm
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diode
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diode
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diode
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diode
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diode
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diode
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diode
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N none
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N 1N4007
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Y UF4007
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N 1N5060
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Y 1N4148
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Y 1N4448
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Y BAV21
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2.3
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1 W
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3.8
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0.18
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0.28
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0.23
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0.4
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0.4
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0.4
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5
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5 W
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3.8
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0.15
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0.28
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0.15
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0.34
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0.32
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0.3
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10
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20 W
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3.8
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0.2
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0.28
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0.2
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0.32
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0.3
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0.3
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15
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45 W
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3.8
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0.3
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0.38
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0.29
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0.38
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0.36
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0.32
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20
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80 W
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4.0
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0.4
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0.48
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0.4
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0.48
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0.48
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0.45
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output power
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distortion in % ; Y = sine wave at 100kHz@5W correct ; N = sine wave at 100kHz@5W not completely correct
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into 5 ohm
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transistor base to collector& emitter (1)
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transistor base & emitter
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transistor base to collector & emitter
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transistor base & emitter
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transistor base to collector & emitter
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transistor base & emitter
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diode
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Y 2SC2073
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N 2SC2073
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Y BD139
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Y BD139
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Y BC550B
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Y BC550B
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Y BYV79E
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1 W
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0.24
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0.28
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0.25
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0.6
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0.12
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0.75
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0.1
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5 W
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0.14
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0.25
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0.13
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0.45
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0.15
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0.5
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0.32
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20 W
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0.13
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0.23
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0.14
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0.3
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0.18
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0.38
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0.32
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45 W
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0.24
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0.28
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0.25
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0.32
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0.28
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0.38
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0.32
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80 W
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0.36
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0.4
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0.38
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0.44
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0.4
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0.44
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0.4
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3. Baxandall diode vs. distortion [quasi-complementary output stage]
remark: experimental prototype test set-up, no use of overall feedback.
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output voltage
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output power
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distortion in %
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into 5 ohm
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diode
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transistor base to collector & emitter
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transistor base to collector & emitter
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diode
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diode
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diode
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diode
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none
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2SC2073
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2SC1815BL
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UF4007
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1N4007
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BYX49-1200
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1N5060
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1 W
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3.8
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0.25
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0.08
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0.34
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0.22
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0.26
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0.23
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5 W
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3.6
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0.14
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0.11
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0.32
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0.16
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0.18
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0.17
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20 W
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3.6
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0.14
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0.2
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0.31
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0.2
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0.22
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0.2
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45 W
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3.6
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0.24
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0.3
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0.38
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0.28
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0.3
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0.28
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80 W
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3.6
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0.38
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0.42
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0.49
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0.4
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0.4
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0.39
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in Veff
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into 5 ohm
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diode
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transistor base to collector & emitter
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transistor base to collector & emitter
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diode
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diode
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diode
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diode
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none
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2SC2073
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BC550B
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1N4007
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UF4007
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BYV79E
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1N5060
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2.3
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1 W
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3.8
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0.18
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0.17
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0.19
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0.34
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0.12
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0.23
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5
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5 W
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3.6
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0.10
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0.18
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0.17
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0.3
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0.34
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0.17
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10
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20 W
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3.6
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0.13
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0.18
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0.19
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0.32
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0.3
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0.2
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15
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45 W
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3.4
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0.23
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0.28
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0.28
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0.38
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0.3
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0.28
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20
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80 W
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3.4
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0.36
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0.4
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0.4
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0.48
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0.39
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0.39
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notice: all measurements in order of appearance, so at 1W accordingly 2SC2073, BC550B, 1N4007, UF4007 and the BYV79E was measured, this the same for 5W, 20W, 45W and 80W
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output power
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distortion in %
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notice: all measurements in order of appearance, so at 1W accordingly the 2SC2073, 2SC1815, UF4007 and the BYX49 was measured, this the same for 5W, 20W, 45W and 80W
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